Manufacturer Part Number
2N5550TFR
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single
Product Features and Performance
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Operating Temperature: 150°C (TJ)
Power Max: 625 mW
Voltage Collector Emitter Breakdown (Max): 140 V
Current Collector (Ic) (Max): 600 mA
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency Transition: 300MHz
Product Advantages
High power handling capability
Wide voltage and current range
Fast switching speed
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 140V
Collector Current: 600mA
Transistor Gain: 60 (min)
Transition Frequency: 300MHz
Quality and Safety Features
Designed for high-temperature operation up to 150°C
Robust through-hole package for reliable performance
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Power amplifiers
Switching circuits
Audio amplifiers
General-purpose amplification
Product Lifecycle
Active and widely available product
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power handling capability
Wide operating voltage and current range
Fast switching speed for high-frequency applications
Reliable performance in high-temperature environments
Compatibility with a variety of electronic circuit designs