Manufacturer Part Number
2N5550TFR
Manufacturer
onsemi
Introduction
The 2N5550TFR is a general-purpose NPN bipolar junction transistor (BJT) from onsemi, suitable for a wide range of amplifier and switching applications.
Product Features and Performance
High voltage rating of 140V
High current capability of 600mA
High gain of 60 at 10mA, 5V
High transition frequency of 300MHz
Low collector-emitter saturation voltage of 250mV at 5mA, 50mA
Power dissipation up to 625mW
Operating temperature range up to 150°C
Product Advantages
Robust and reliable performance
Versatile applications in amplifier and switching circuits
Compact and space-saving TO-92 package
RoHS-compliant design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 140V
Collector Current (Max): 600mA
DC Current Gain (hFE): 60 min. @ 10mA, 5V
Transition Frequency: 300MHz
Collector-Emitter Saturation Voltage: 250mV max. @ 5mA, 50mA
Power Dissipation: 625mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS-3 compliant
Suitable for industrial and consumer applications
Reliable performance under harsh environmental conditions
Compatibility
Can be used as a direct replacement for various NPN bipolar transistors in common amplifier and switching applications
Application Areas
General-purpose amplifier circuits
Switching and control circuits
Power supplies
Industrial and consumer electronics
Product Lifecycle
This is an active and widely available product from onsemi
Replacements and upgrades are readily available from onsemi and other manufacturers
Key Reasons to Choose This Product
Robust and reliable performance across a wide range of applications
High voltage, current, and power handling capabilities
Excellent gain and high-frequency characteristics
Compact and space-saving TO-92 package
RoHS-compliant design for environmentally-conscious applications
Availability of replacements and upgrades from the manufacturer