Manufacturer Part Number
BC807-40W
Manufacturer
Diotec Semiconductor
Introduction
High-power, general-purpose PNP bipolar junction transistor (BJT)
Product Features and Performance
Designed for high-power switching and amplifier applications
Capable of operating at high frequencies up to 100 MHz
High current handling capability up to 800 mA
High DC current gain (hFE) of at least 250 @ 100 mA, 1 V
Low collector-emitter saturation voltage (Vce,sat) of max. 700 mV @ 50 mA, 500 mA
Product Advantages
Suitable for a wide range of high-power applications
Excellent high-frequency performance
Robust and reliable design
Compact surface-mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 45 V
Collector Cutoff Current (ICBO): Max. 100 nA
Power Dissipation (Pd): 310 mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities
Undergoes rigorous testing and quality control
Compatibility
Standard SOT-23-3 (TO-236) surface-mount package
Suitable for automated assembly processes
Application Areas
High-power switching circuits
Amplifier circuits
Power supplies
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Excellent performance and reliability for high-power applications
Compact and easy-to-integrate surface-mount package
Wide operating temperature range and RoHS compliance
Proven track record and support from a reputable semiconductor manufacturer