Manufacturer Part Number
BC807-40WT1G
Manufacturer
onsemi
Introduction
The BC807-40WT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
Product Features and Performance
PNP bipolar transistor
Operating temperature range: -55°C to 150°C
Power rating: 460 mW
Collector-emitter breakdown voltage (max): 45 V
Collector current (max): 500 mA
Collector cutoff current (max): 100 nA
Collector-emitter saturation voltage (max): 700 mV @ 50 mA, 500 mA
DC current gain (min): 250 @ 100 mA, 1 V
Transition frequency: 100 MHz
Product Advantages
Suitable for general-purpose amplifier and switching applications
Small package size (SC-70, SOT-323) for compact designs
High power handling capability
Wide operating temperature range
Key Technical Parameters
Manufacturer Part Number: BC807-40WT1G
Package: SC-70-3 (SOT323)
Transistor Type: PNP
Operating Temperature Range: -55°C to 150°C
Power Rating: 460 mW
Collector-Emitter Breakdown Voltage (max): 45 V
Collector Current (max): 500 mA
Collector Cutoff Current (max): 100 nA
Collector-Emitter Saturation Voltage (max): 700 mV @ 50 mA, 500 mA
DC Current Gain (min): 250 @ 100 mA, 1 V
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 compliant
Reliable performance and long-term stability
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
General-purpose amplifier and switching applications
Consumer electronics
Industrial electronics
Telecommunications equipment
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available from the manufacturer or authorized distributors.
Several Key Reasons to Choose This Product
Versatile PNP bipolar transistor suitable for a variety of applications
High power handling capability and wide operating temperature range
Small, surface-mount package for compact design
Reliable performance and RoHS3 compliance
Readily available and supported by the manufacturer