Manufacturer Part Number
ZXMP6A17GTA
Manufacturer
Diodes Incorporated
Introduction
This is a single P-channel MOSFET transistor product from Diodes Incorporated.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
125mOhm maximum On-Resistance (Rds(on)) at 2.2A, 10V
3A continuous Drain Current (Id) at 25°C
637pF maximum Input Capacitance (Ciss) at 30V
2W maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
P-Channel MOSFET for complementary designs
Surface mount packaging (SOT-223-3)
RoHS3 compliant
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
1V maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
7nC maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
This MOSFET is suitable for a wide range of power management and switching applications.
Application Areas
Power supplies
Motor drivers
Battery chargers
General purpose power switching
Product Lifecycle
This product is an active and ongoing part of Diodes Incorporated's portfolio. Replacement or upgrade options may be available as technology advances.
Key Reasons to Choose This Product
Reliable P-Channel MOSFET performance
Low on-resistance for efficient power switching
Compact surface mount packaging
RoHS3 compliance for environmental considerations
Broad operating temperature range
ZXMP6A17KDiodes Incorporated