Manufacturer Part Number
ZXMP6A17GQTA
Manufacturer
Diodes Incorporated
Introduction
High-performance P-channel MOSFET transistor
Suitable for a wide range of power management and switching applications
Product Features and Performance
Low on-resistance (RDS(on)) of 125 mOhm
Continuous drain current (ID) of 3A
Drain-to-source voltage (VDS) of 60V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (Qg) of 17.7 nC
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design with high voltage and current capabilities
Versatile for use in various power management circuits
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 3A
On-Resistance (RDS(on)): 125 mOhm
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering processes
Robust package design for reliable operation
Compatibility
Compatible with a wide range of power management and control applications
Suitable for use in various electronic devices and systems
Application Areas
Power supplies
Motor drives
Power management circuits
Switching regulators
General-purpose power switching applications
Product Lifecycle
This product is an active and widely available component
Replacements and upgrades may be available from the manufacturer or authorized distributors
Key Reasons to Choose This Product
Excellent power efficiency and low power loss due to low on-resistance
Robust design with high voltage and current capabilities
Versatile for use in a wide range of power management and switching applications
Reliable performance over a wide temperature range
Compliance with RoHS3 regulations for environmentally-friendly use
