Manufacturer Part Number
ZXMP6A13FQTA
Manufacturer
Diodes Incorporated
Introduction
P-channel enhancement-mode MOSFET
Suitable for general-purpose switching and amplification applications
Product Features and Performance
60V drain-to-source voltage
900mA continuous drain current at 25°C
400mOhm maximum on-resistance at 900mA, 10V
219pF maximum input capacitance at 30V
625mW maximum power dissipation at 25°C
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for efficient switching
High voltage rating for a wide range of applications
Small SOT-23-3 package for compact designs
RoHS3 compliant for environmentally friendly use
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 400mOhm @ 900mA, 10V
Continuous drain current (Id): 900mA @ 25°C
Input capacitance (Ciss): 219pF @ 30V
Power dissipation: 625mW @ 25°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Suitable for industrial and consumer applications
Robust construction for reliable performance
Compatibility
SOT-23-3 package for surface mount assembly
Interchangeable with similar P-channel MOSFET devices
Application Areas
General-purpose switching and amplification circuits
Power management systems
Battery-powered devices
Industrial controls and automation
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
High voltage and current ratings for versatile use
Low on-resistance for efficient power switching
Small package size for compact design integration
RoHS3 compliance for environmentally friendly applications
Reliable performance and long-term availability