Manufacturer Part Number
ZXMP4A57E6QTA
Manufacturer
Diodes Incorporated
Introduction
High-performance P-channel enhancement-mode power MOSFET designed for automotive and general-purpose applications.
Product Features and Performance
40V Drain-to-Source Voltage
80mΩ Maximum On-Resistance
9A Continuous Drain Current
-55°C to 150°C Operating Temperature Range
Low Input Capacitance of 833pF
1W Power Dissipation
Product Advantages
Optimized for automotive applications
Excellent on-resistance and switching performance
Compact SOT-23-6 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 80mΩ
Continuous Drain Current (Id): 2.9A
Input Capacitance (Ciss): 833pF
Power Dissipation (Pd): 1.1W
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Compatibility
Suitable for a wide range of automotive and general-purpose applications.
Application Areas
Motor control
Battery management
Power conversion
General-purpose switching
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Optimized for demanding automotive environments
Excellent switching and conduction performance
Compact and space-efficient SOT-23-6 package
Robust design with high temperature capability
RoHS3 compliance and AEC-Q101 qualification for reliable operation
ZXMP4A16GTA MOSZETEX
ZXMP4A16KTCDiodes IncorporatedMOSFET P-CH 40V 6.6A TO252-3