ZXMHC6A07N8TC - Diodes Incorporated

Manufacturer Part Number

ZXMHC6A07N8TC

Manufacturer

Diodes Incorporated

Introduction

This is a discrete semiconductor product, specifically a transistor in the FET (Field-Effect Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) category.

Product Features and Performance

2 N-channel and 2 P-channel MOSFETs in a half-bridge configuration

Low on-resistance (RDS(on)) of 250 mOhm @ 1.8A, 10V

High continuous drain current (ID) of up to 1.39A at 25°C

Low input capacitance (Ciss) of 166pF @ 40V

Logic-level gate (Vgs(th) max 3V @ 250µA)

Compact 8-SOIC (0.154", 3.90mm Width) surface mount package

Product Advantages

Efficient power handling and low conduction losses

Compact and space-saving package

Suitable for low-voltage, high-current switching applications

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60V

Operating Temperature Range: -55°C to 150°C

Power Dissipation: 870mW

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package, suitable for automated assembly

Application Areas

Suitable for a wide range of low-voltage, high-current switching applications such as DC-DC converters, motor drives, and power management circuits.

Product Lifecycle

This product is an active and currently available offering from Diodes Incorporated.

Key Reasons to Choose This Product

Excellent power handling and efficiency due to low on-resistance

Compact and space-saving package

Suitable for a broad range of low-voltage, high-current switching applications

RoHS3 compliant for environmental compliance

Actively supported and available from the manufacturer