Manufacturer Part Number
ZXMHC3A01T8TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
2 N and 2 P-Channel (Half Bridge) configuration
MOSFET (Metal Oxide) technology
Logic Level Gate
Surface Mount Mounting
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 1.3W Max
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250A
Product Advantages
Compact surface mount package
High power and current handling
Low on-resistance
Logic level gate drive
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Current Continuous Drain (Id) @ 25°C: 2.7A, 2A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic systems and circuits
Application Areas
Suitable for a wide range of applications requiring high power and current handling
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Compact surface mount package
High power and current handling
Low on-resistance
Logic level gate drive
RoHS3 Compliant