Manufacturer Part Number
ZTX757STZ
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
ROHS3 Compliant
E-Line (TO-92 compatible) Packaging
Through Hole Mounting
Wide Operating Temperature Range: -55°C to 200°C
High Power Handling: 1W
High Collector-Emitter Breakdown Voltage: 300V
High Collector Current: 500mA
Low Collector Cutoff Current: 100nA
Low Collector-Emitter Saturation Voltage: 500mV @ 10mA, 100mA
PNP Transistor Type
High DC Current Gain: 50 min @ 100mA, 5V
High Transition Frequency: 30MHz
Product Advantages
Versatile design suitable for a wide range of applications
Robust performance in high power and high voltage conditions
Excellent electrical characteristics for efficient circuit design
Compact and reliable E-Line (TO-92 compatible) package
Key Technical Parameters
Power Rating: 1W
Collector-Emitter Breakdown Voltage: 300V
Collector Current: 500mA
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 500mV
DC Current Gain: 50 min
Transition Frequency: 30MHz
Quality and Safety Features
ROHS3 Compliant
Stringent quality control and testing
Compatibility
E-Line (TO-92 compatible) package
Suitable for a wide range of electronic circuits and applications
Application Areas
General-purpose amplifier and switching circuits
Power supplies
Motor controls
Audio and instrumentation circuits
Product Lifecycle
Mature product, no discontinuation plans
Readily available with long-term supply
Key Reasons to Choose
Excellent performance and reliability in high power and high voltage applications
Broad compatibility and versatility for diverse circuit designs
Robust construction and quality assurance for long-term use
Cost-effective solution for mainstream electronic applications