Manufacturer Part Number
ZTX751STZ
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Wide operating temperature range: -55°C to 200°C
High power handling: 1W
High collector-emitter breakdown voltage: 60V
High collector current: 2A
Low collector cutoff current: 100nA
Low collector-emitter saturation voltage: 500mV
High current gain: 100
High transition frequency: 100MHz
Product Advantages
Robust thermal performance
High voltage and current capability
Low saturation voltage for efficient operation
High current gain for amplification applications
High transition frequency for high-speed switching
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 2A
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 500mV
DC Current Gain: 100
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
E-Line (TO-92 compatible) package
Compatibility
Through-hole mounting
Application Areas
General-purpose amplifier and switching applications
Power management circuits
Industrial controls
Consumer electronics
Product Lifecycle
Active and available
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose
Robust thermal and electrical performance
High voltage, current, and frequency capabilities
Low saturation voltage for efficient operation
Compact and compatible package
ZTX749KZETEX
ZTX749AFairchild SemiconductorTRANS PNP 35V 2A TO226