MMST3906-7-F - Diodes Incorporated

Manufacturer Part Number

MMST3906-7-F

Manufacturer

Diodes Incorporated

Introduction

Single PNP Bipolar Junction Transistor (BJT)

Designed for general-purpose amplifier and switching applications

Product Features and Performance

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 200 mW

Collector-emitter breakdown voltage: 40 V maximum

Collector current: 200 mA maximum

Collector-emitter saturation voltage: 300 mV maximum @ 5 mA, 50 mA

DC current gain: 100 minimum @ 10 mA, 1 V

Transition frequency: 300 MHz

Product Advantages

Reliable and robust performance

Suitable for a wide range of applications

Small package size for compact circuit designs

RoHS compliant

Key Technical Parameters

Transistor type: PNP

Package: SOT-323 (SC-70)

Mounting type: Surface mount

Quality and Safety Features

RoHS3 compliant

Manufactured in accordance with industry quality standards

Compatibility

Suitable for general-purpose amplifier and switching applications

Application Areas

Consumer electronics

Industrial control systems

Telecommunications equipment

Automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation.

Replacement or upgraded versions may become available in the future.

Key Reasons to Choose This Product

Reliable and robust performance across a wide temperature range

Compact package size for space-constrained designs

Compliance with RoHS regulations

Suitability for a diverse range of general-purpose applications