MMST3904-7-F - Diodes Incorporated

Manufacturer Part Number

MMST3904-7-F

Manufacturer

Diodes Incorporated

Introduction

NPN Bipolar Junction Transistor (BJT)

Designed for general-purpose amplifier and switch applications

Product Features and Performance

Low collector-emitter saturation voltage

High transition frequency of 300 MHz

High DC current gain of 100 (min) at 10 mA, 1 V

Low power dissipation of 200 mW

Wide operating temperature range of -55°C to 150°C

Product Advantages

Suitable for a variety of low-power, high-frequency applications

Excellent switching and amplification capabilities

Compact SOT-323 surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40 V (max)

Collector Current (IC): 200 mA (max)

Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV @ 5 mA, 50 mA

DC Current Gain (hFE): 100 (min) @ 10 mA, 1 V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

General-purpose amplifier and switching circuits

Low-power, high-frequency analog and digital circuits

Consumer electronics, industrial, and automotive applications

Product Lifecycle

This product is an active and widely available part

Replacements and upgrades are readily available from Diodes Incorporated and other manufacturers

Several Key Reasons to Choose This Product

Excellent switching and amplification performance

High transition frequency for high-speed applications

Low power dissipation for efficient operation

Wide operating temperature range for versatile use

Compact and convenient SOT-323 surface mount package

RoHS3 compliance for environmentally-friendly applications