MMDT5551-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT5551-7-F

Manufacturer

Diodes Incorporated

Introduction

Dual NPN bipolar junction transistor (BJT) array

Product Features and Performance

Operates at high frequencies up to 300MHz

Low collector-emitter saturation voltage (VCE(sat)) of 200mV @ 5mA, 50mA

High collector-emitter breakdown voltage (BVCEO) of 160V

Low collector cutoff current (ICBO) of 50nA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact 6-TSSOP, SC-88, SOT-363 surface mount package

Reliable performance in a wide range of applications

Efficient power handling with low power dissipation (200mW)

Key Technical Parameters

Transistor Type: 2 NPN (Dual)

DC Current Gain (hFE): 80 (min) @ 10mA, 5V

Collector-Emitter Breakdown Voltage (BVCEO): 160V (max)

Collector Current (IC): 200mA (max)

Collector Cutoff Current (ICBO): 50nA (max)

Collector-Emitter Saturation Voltage (VCE(sat)): 200mV (max) @ 5mA, 50mA

Transition Frequency (fT): 300MHz

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for reliable delivery

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Suitable for use in amplifiers, switches, and logic circuits

Applicable in various electronic devices and equipment

Product Lifecycle

This product is an active and ongoing offering from Diodes Incorporated

Replacements and upgrades may be available in the future

Several Key Reasons to Choose This Product

Reliable and high-performance dual NPN BJT array

Compact surface mount package for efficient board layout

Wide operating temperature range and power handling capability

Excellent high-frequency characteristics up to 300MHz

RoHS3 compliance for environmentally-conscious applications