MMDT5451-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT5451-7-F

Manufacturer

Diodes Incorporated

Introduction

High-performance NPN and PNP transistor arrays in a small SOT-363 package

Product Features and Performance

Dual NPN and PNP transistors

High voltage rating up to 160V

High current capability up to 200mA

High transition frequency of 300MHz

Low collector-emitter saturation voltage

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact and space-saving SOT-363 package

Excellent high-frequency performance

Reliable and durable construction

Versatile applications in various electronic circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 160V (max)

Collector Current: 200mA (max)

Collector Cutoff Current: 50nA (max)

DC Current Gain: 80 (min) @ 10mA, 5V

Transition Frequency: 300MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Analog and digital circuits

Switching and amplifier circuits

Power management and control applications

Telecommunications and industrial electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Excellent high-frequency performance for demanding applications

Reliable and durable construction for long-term use

Versatile package and technical parameters for design flexibility

Compliance with RoHS3 standards for environmental responsibility

Availability of replacement or upgrade options for long-term support