Manufacturer Part Number
MMDT3906-7-F
Manufacturer
Diodes Incorporated
Introduction
Dual PNP Bipolar Junction Transistor (BJT) Array
Product Features and Performance
Optimized for high-speed switching and amplifier applications
High transition frequency of 250MHz
Low collector-emitter saturation voltage of 400mV at 5mA, 50mA
Wide operating temperature range of -55°C to 150°C
Product Advantages
Space-saving 6-TSSOP, SC-88, SOT-363 package
RoHS3 compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Collector Current (Max): 200mA
Power Dissipation (Max): 200mW
DC Current Gain (hFE) (Min): 100 @ 10mA, 1V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package for easy PCB integration
Application Areas
High-speed switching circuits
Amplifier circuits
General-purpose PNP transistor applications
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
Optimized for high-speed switching and amplifier applications
Compact surface mount package
Wide operating temperature range
Compliant with RoHS3 regulations
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