MMDT3906-7-F - Diodes Incorporated

Manufacturer Part Number

MMDT3906-7-F

Manufacturer

Diodes Incorporated

Introduction

Dual PNP Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Optimized for high-speed switching and amplifier applications

High transition frequency of 250MHz

Low collector-emitter saturation voltage of 400mV at 5mA, 50mA

Wide operating temperature range of -55°C to 150°C

Product Advantages

Space-saving 6-TSSOP, SC-88, SOT-363 package

RoHS3 compliant

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40V

Collector Current (Max): 200mA

Power Dissipation (Max): 200mW

DC Current Gain (hFE) (Min): 100 @ 10mA, 1V

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount package for easy PCB integration

Application Areas

High-speed switching circuits

Amplifier circuits

General-purpose PNP transistor applications

Product Lifecycle

Currently available, no plans for discontinuation

Key Reasons to Choose This Product

Optimized for high-speed switching and amplifier applications

Compact surface mount package

Wide operating temperature range

Compliant with RoHS3 regulations