Manufacturer Part Number
MMDT3904VC-7
Manufacturer
Diodes Incorporated
Introduction
Dual NPN Bipolar Junction Transistor (BJT) Array
Product Features and Performance
Surface mount SOT-563 and SOT-666 package options
Wide operating temperature range of -55°C to 150°C
High maximum collector current of 200mA
Low collector-emitter saturation voltage of 300mV @ 5mA, 50mA
High transition frequency of 300MHz
Minimum DC current gain (hFE) of 100 @ 10mA, 1V
Product Advantages
Compact size for space-constrained applications
Excellent high-frequency performance
Low power consumption
Robust thermal capabilities
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 40V
Power Dissipation (Max): 200mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for various electronic circuits and applications
Application Areas
Analog and digital switching circuits
Amplifier and driver stages
General-purpose transistor applications
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose
Compact and space-efficient design
Exceptional high-frequency performance
Wide operating temperature range
Robust thermal capabilities
Reliable and RoHS3 compliant
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