MMBTA55-7-F - Diodes Incorporated

Manufacturer Part Number

MMBTA55-7-F

Manufacturer

Diodes Incorporated

Introduction

PNP bipolar junction transistor (BJT)

Designed for automotive and industrial applications

Product Features and Performance

Capable of operating at high voltages up to 60V

Supports high collector current up to 500mA

Low collector-emitter saturation voltage of 250mV

High DC current gain of at least 100

High transition frequency of 50MHz

Wide operating temperature range of -55°C to 150°C

Product Advantages

Robust and reliable design

Suitable for high-power and high-speed applications

Excellent thermal performance

Compliant with RoHS3 standards

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 60V

Collector Current (max): 500mA

Collector Cutoff Current (max): 100nA

DC Current Gain (min): 100

Transition Frequency: 50MHz

Power Dissipation: 300mW

Quality and Safety Features

AEC-Q101 qualified for automotive applications

Housed in RoHS3-compliant SOT-23-3 package

Compatibility

Suitable for a wide range of electronic circuits and systems

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Amplifiers and switches

Product Lifecycle

Currently in active production

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Robust and reliable performance

Capable of high-voltage and high-current operation

Excellent thermal management

Automotive and industrial grade quality

Compact and space-efficient package