Manufacturer Part Number
MMBTA55LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 (TO-236) Package
Operating Temperature: -55°C ~ 150°C
Power Rating: 225 mW
Collector-Emitter Breakdown Voltage (Max): 60 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage (Max): 250 mV @ 10 mA, 100 mA
DC Current Gain (hFE) (Min): 100 @ 100 mA, 1 V
Transition Frequency: 50 MHz
Product Advantages
Compact surface mount package
Wide operating temperature range
Robust performance characteristics
Key Technical Parameters
Transistor Type: PNP
Mounting Type: Surface Mount
Package: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Suitable for use in various electronic circuits and systems
Product Lifecycle
Current production, no indication of discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Reliable and robust performance
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental responsibility