Manufacturer Part Number
MMBTA05-7-F
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (SOT-23-3)
Wide Operating Temperature Range: -55°C to 150°C
Maximum Power Rating: 300 mW
Maximum Collector-Emitter Breakdown Voltage: 60 V
Maximum Collector Current: 500 mA
Maximum Collector Cutoff Current: 100 nA
Low Collector-Emitter Saturation Voltage: 250 mV @ 10 mA, 100 mA
Minimum DC Current Gain (hFE): 100 @ 100 mA, 1 V
High Transition Frequency: 100 MHz
Product Advantages
Compact surface mount package
Reliable performance across wide temperature range
High power handling and voltage capability
Low saturation voltage for efficient operation
High current gain and high-frequency switching
Key Technical Parameters
Transistor Type: NPN
Package: SOT-23-3
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of electronic circuit applications
Application Areas
Switching and amplification circuits
Power supplies
Audio and consumer electronics
Industrial control systems
Product Lifecycle
Current production model, no known discontinuation plans
Replacement and upgraded models available if needed
Key Reasons to Choose This Product
Compact and efficient surface mount design
Wide operating temperature range for reliable performance
High power handling and voltage capability
Low saturation voltage for improved efficiency
High current gain and high-frequency switching ability
RoHS3 compliance for environmentally-conscious applications
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