Manufacturer Part Number
MMBT918LT1G
Manufacturer
onsemi
Introduction
The MMBT918LT1G is a high-frequency NPN bipolar junction transistor (BJT) designed for use in radio frequency (RF) applications.
Product Features and Performance
High frequency operation up to 600 MHz
Low noise figure of 6 dB typical at 60 MHz
High current gain of 20 minimum at 3 mA, 1 V
Low collector-emitter voltage breakdown of 15 V
Maximum power dissipation of 225 mW
Product Advantages
Excellent high-frequency performance
Low noise characteristics
High current gain
Compact surface-mount packaging
Key Technical Parameters
Transistor Type: NPN
Collector-Emitter Breakdown Voltage (VCEO): 15 V
Collector Current (IC): 50 mA
Current Gain (hFE): 20 min. @ 3 mA, 1 V
Transition Frequency (fT): 600 MHz
Power Dissipation: 225 mW
Quality and Safety Features
Compliant with RoHS3 directive
Reliable performance in a wide temperature range (-55°C to 150°C)
Compatibility
Compatible with standard surface-mount SOT-23-3 (TO-236) package
Application Areas
RF amplifier and oscillator circuits
Radio and wireless communication equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent high-frequency performance for RF applications
Low noise characteristics for improved signal-to-noise ratio
High current gain for efficient amplification
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile use