MMBT2222A-7 - Diodes Incorporated

Manufacturer Part Number

MMBT2222A-7

Manufacturer

Diodes Incorporated

Introduction

Bipolar Junction Transistor (BJT)

Single NPN Transistor

Product Features and Performance

High-frequency performance

Low collector-emitter saturation voltage

High current gain

Suitable for amplifier and switching applications

Product Advantages

Reliable automotive-grade quality

AEC-Q101 qualified

Wide operating temperature range (-55°C to 150°C)

Surface-mount packaging for efficient board space utilization

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 40V

Collector Current (Max): 600mA

Collector Cutoff Current (Max): 10nA

Collector-Emitter Saturation Voltage (Max): 1V @ 50mA, 500mA

DC Current Gain (Min): 100 @ 150mA, 10V

Transition Frequency: 300MHz

Power Dissipation (Max): 310mW

Quality and Safety Features

RoHS non-compliant

Automotive-grade quality (AEC-Q101 qualified)

Compatibility

Compatible with various electronic circuits and systems requiring a high-performance NPN transistor

Application Areas

Amplifiers

Switches

Drivers

Logic circuits

General-purpose electronic applications

Product Lifecycle

This product is an established and mature design

Replacements and upgrades are readily available from the manufacturer and other vendors

Key Reasons to Choose This Product

Reliable automotive-grade quality and performance

Wide temperature range for demanding applications

Efficient surface-mount packaging for space-constrained designs

High-frequency capabilities for high-speed circuits

Low saturation voltage for power-efficient operation

High current gain for reduced driver requirements