MMBT2222A-7-F - Diodes Incorporated

Manufacturer Part Number

MMBT2222A-7-F

Manufacturer

Diodes Incorporated

Introduction

MMBT2222A-7-F is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of applications.

Product Features and Performance

Designed for high-frequency switching and amplifier applications

High current and voltage handling capabilities

Fast switching speed

Low collector-emitter saturation voltage

Wide operating temperature range

Product Advantages

Reliable and robust performance

Compact surface mount package

AEC-Q101 qualified for automotive applications

RoHS3 compliant

Key Technical Parameters

Package: SOT-23-3

Collector-Emitter Breakdown Voltage (Max): 40 V

Collector Current (Max): 600 mA

Power Dissipation (Max): 310 mW

Current Gain (Min): 100 @ 150 mA, 10 V

Transition Frequency: 300 MHz

Quality and Safety Features

Compliant with RoHS3 directive

AEC-Q101 qualified for automotive applications

Reliable and stable performance

Compatibility

Can be used as a replacement or upgrade for various NPN bipolar transistor applications

Application Areas

High-frequency switching and amplifier circuits

Automotive electronics

Industrial control systems

Power supplies

Consumer electronics

Product Lifecycle

This product is currently in production and available

No immediate plans for discontinuation

Replacement or upgraded models may become available in the future

Several Key Reasons to Choose This Product

Robust and reliable performance

Compact surface mount package

Automotive-grade qualification (AEC-Q101)

RoHS3 compliance for environmental responsibility

Suitable for a wide range of high-frequency and high-current applications