HBDM60V600W-7 - Diodes Incorporated

Manufacturer Part Number

HBDM60V600W-7

Manufacturer

Diodes Incorporated

Introduction

High-voltage NPN and PNP bipolar junction transistor array in a small SOT-363 package.

Product Features and Performance

Capable of operating at high voltages up to 65V

Supports high collector currents up to 600mA

Achieves high current gain of 100 at 100mA and 150mA

Offers fast switching with transition frequency of 100MHz

Operates over a wide temperature range of -55°C to 150°C

Product Advantages

Compact SOT-363 package for space-saving designs

Supports high-voltage and high-current applications

Maintains high current gain and fast switching performance

Wide operating temperature range for diverse use cases

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 65V, 60V

Collector Current (max): 500mA, 600mA

Collector Cutoff Current (max): 100nA

VCE Saturation Voltage (max): 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA

Transistor Type: NPN, PNP

DC Current Gain (min): 100 @ 100mA, 1V / 100 @ 150mA, 10V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Meets industrial operating temperature requirements

Compatibility

Surface mount package (SOT-363)

Suitable for standard PCB assembly processes

Application Areas

High-voltage and high-current analog and digital circuits

Power management and control systems

Amplifiers, switches, and drivers

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact and space-saving SOT-363 package

Supports high-voltage and high-current operation

Maintains excellent electrical performance across a wide temperature range

Meets industry quality and safety standards

Suitable for a variety of high-power analog and digital applications