Manufacturer Part Number
FZT751QTC
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Designed for automotive applications
Meets AEC-Q101 qualification standards
Operates in temperature range of -55°C to 150°C
Power rating of 2 watts
Collector-emitter breakdown voltage of 60 volts
Collector current up to 3 amps
Collector cutoff current of 100 nanoamps
Saturation voltage of 600 millivolts at 300 milliamps, 3 amps
Current gain of 100 minimum at 500 milliamps, 2 volts
Transition frequency of 140 MHz
Product Advantages
Automotive-grade reliability and performance
Wide operating temperature range
High power handling capability
Low saturation voltage for efficient operation
High current gain and transition frequency
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 3A
Collector Cutoff Current (Max): 100nA
Collector-Emitter Saturation Voltage: 600mV
DC Current Gain: 100 (min)
Transition Frequency: 140MHz
Quality and Safety Features
Meets AEC-Q101 automotive qualification standards
Robust package (SOT-223-3, TO-261-4, TO-261AA)
Suitable for high-reliability applications
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Automotive electronics
Power management circuits
Switching and amplifier applications
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement parts and upgrades available
Several Key Reasons to Choose This Product
Automotive-grade reliability and performance
Wide operating temperature range
High power handling capability
Low saturation voltage for efficient operation
High current gain and transition frequency
Meets automotive industry standards (AEC-Q101)
Available in suitable package options and packaging
FZT749 MOSFairchild (onsemi)