Manufacturer Part Number
FZT751QTA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High power handling capability up to 3W
High collector-emitter breakdown voltage of 60V
High collector current rating of up to 3A
Low collector-emitter saturation voltage of 600mV @ 300mA, 3A
High DC current gain of 100 min @ 500mA, 2V
High transition frequency of 140MHz
Product Advantages
Excellent thermal performance
High reliability and stability
Suitable for various power amplifier and switching applications
Key Technical Parameters
Power Rating: 3W
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 3A
DC Current Gain: 100 min @ 500mA, 2V
Transition Frequency: 140MHz
Quality and Safety Features
RoHS3 compliant
Meets relevant industry standards and regulations
Compatibility
Surface mount package (SOT-223-3)
Suitable for various electronic circuits and systems
Application Areas
Power amplifiers
Switching circuits
Power management
Audio/video equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent thermal and electrical performance
High reliability and stability
Wide operating temperature range
Compact and versatile surface mount package
Compatibility with various electronic systems
Compliance with relevant industry standards