Manufacturer Part Number
FZT493TA
Manufacturer
Diodes Incorporated
Introduction
High-performance NPN epitaxial silicon transistor suitable for switching and amplifier applications.
Product Features and Performance
High gain-bandwidth product
Low collector-emitter saturation voltage
Wide operating temperature range
Suitable for high-speed switching and amplifier applications
Product Advantages
Excellent switching characteristics
High current and power handling capability
Robust design for reliable performance
Key Technical Parameters
Power Max: 2 W
Voltage Collector Emitter Breakdown (Max): 100 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 100 nA
Vce Saturation (Max) @ Ib, Ic: 600 mV @ 100 mA, 1 A
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250 mA, 10 V
Frequency Transition: 150 MHz
Quality and Safety Features
ROHS3 compliant
Suitable for high-reliability applications
Compatibility
Package: TO-261-4, TO-261AA
Application Areas
Switching and amplifier circuits
Power supplies
Motor control
Industrial and consumer electronics
Product Lifecycle
This product is an active, in-production device.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Excellent switching and amplifying performance
High current and power handling capability
Wide operating temperature range for reliable operation
Robust design for long-term reliability
Compatible with common surface mount packages
FZT558TAPBFFreescale / NXP Semiconductors