Manufacturer Part Number
FZT458TA
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT)
Part of Diodes Incorporated's discrete semiconductor product line
Product Features and Performance
Power rating of 2 Watts
Collector-Emitter Breakdown Voltage up to 400V
Collector Current up to 300mA
Collector Cutoff Current of 100nA (max)
Vce Saturation Voltage of 500mV @ 6mA, 50mA
DC Current Gain (hFE) of 100 min @ 50mA, 10V
Transition Frequency of 50MHz
Product Advantages
High voltage and power handling capability
Low collector-emitter saturation voltage
High DC current gain
Surface mount package for compact design
Key Technical Parameters
Package: TO-261-4, TO-261AA in SOT-223-3
Operating Temperature Range: -55°C to 150°C
RoHS Compliant
Quality and Safety Features
Reliable performance under harsh operating conditions
Adherence to RoHS3 environmental standards
Compatibility
Suitable for a wide range of electronic circuit designs
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Motor controls
Product Lifecycle
Active and available product
Replacement or upgrade options may be available from Diodes Inc.
Key Reasons to Choose
High voltage and power capability
Efficient operation with low saturation voltage
Robust and reliable performance
Compact surface mount package
RoHS compliance for eco-friendly use
