Manufacturer Part Number
FZT1151ATA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Designed for power amplifier, power switching, and other power control applications
Product Features and Performance
High power handling capacity up to 2.5W
High voltage rating up to 40V
High current capability up to 3A
High current gain of at least 250 at 500mA, 2V
High transition frequency of 145MHz
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent power handling and efficiency
Reliable and stable performance
Suitable for various power control and amplification applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 40V
Collector Current (Max): 3A
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 300mV @ 250mA, 3A
DC Current Gain: 250 @ 500mA, 2V
Transition Frequency: 145MHz
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Robust and durable design
Compatibility
Compatible with TO-261-4, TO-261AA package types
Surface mount (SMT) package for easy integration
Application Areas
Power amplifiers
Power switches
Motor controls
Battery chargers
Industrial power electronics
Product Lifecycle
Currently in active production
No imminent discontinuation plans
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High power handling and efficiency for demanding applications
Reliable and stable performance across a wide temperature range
Suitable for various power control and amplification needs
Easy integration with surface mount package
RoHS3 compliance for environmental responsibility
FZT3019onsemiTRANS NPN 80V 1A SOT223-4