Manufacturer Part Number
FMMTL718TA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Suitable for a wide range of analog and digital applications
Product Features and Performance
High current capability up to 1A
Wide operating temperature range: -55°C to 150°C
Low collector-emitter saturation voltage
High transition frequency of 265MHz
High DC current gain (hFE) of at least 200 at 500mA, 2V
Product Advantages
Compact surface-mount package (SOT-23-3)
RoHS-compliant design
Reliable performance in various applications
Key Technical Parameters
Power rating: 500mW
Collector-emitter breakdown voltage: 20V
Collector cutoff current: 10nA
Quality and Safety Features
RoHS3 compliant
Manufactured in ISO-certified facilities for consistent quality
Compatibility
Suitable for a wide range of analog and digital circuit designs
Application Areas
Amplifiers
Switches
Drivers
Logic circuits
General-purpose PNP transistor applications
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available, contact the manufacturer for details
Key Reasons to Choose This Product
High-performance PNP transistor with excellent electrical characteristics
Compact surface-mount package for efficient board layout
Wide operating temperature range for reliable performance in diverse environments
RoHS compliance for environmentally-friendly design
Backed by Diodes Incorporated's quality and reliability