Manufacturer Part Number
FMMTL619TA
Manufacturer
Diodes Incorporated
Introduction
Bipolar Junction Transistor (BJT)
Product Features and Performance
NPN transistor
Collector-Emitter Breakdown Voltage (BVCEO): 50V
Collector Current (IC): 1.25A
Power Dissipation: 500mW
Transition Frequency (fT): 180MHz
DC Current Gain (hFE): 200 (min) @ 500mA, 5V
Product Advantages
Suitable for high-speed switching and amplifier applications
Robust design for reliable performance
Compact surface-mount package
Key Technical Parameters
Package: SOT-23-3
Operating Temperature: -55°C to 150°C
RoHS Compliant
Quality and Safety Features
ROHS3 Compliant
Suitable for Tape & Reel packaging
Compatibility
Compatible with standard BJT applications
Application Areas
High-speed switching circuits
Amplifier circuits
General-purpose electronics
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades available if needed
Key Reasons to Choose
Reliable performance in high-speed and high-current applications
Compact surface-mount package for efficient board space utilization
Wide operating temperature range for versatile use
RoHS compliance for environmentally-conscious design
FMMTH10Diodes Incorporated
FMMTL720TAPBFZETEX