Manufacturer Part Number
FMMT495TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Transistor - Bipolar (BJT) - Single
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Operating Temperature Range: -55°C to 150°C
Max Power: 500 mW
Max Collector-Emitter Breakdown Voltage: 150 V
Max Collector Current: 1 A
Max Collector Cutoff Current: 100 nA
Max Collector-Emitter Saturation Voltage: 300 mV @ 50 mA, 500 mA
Transistor Type: NPN
Minimum DC Current Gain (hFE): 10 @ 250 mA, 10 V
Transition Frequency: 100 MHz
Surface Mount Mounting
Product Advantages
High voltage and current capability
Low saturation voltage
High transition frequency
Small, surface mount package
Key Technical Parameters
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 150 V
Collector Current: 1 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 300 mV
DC Current Gain: 10
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with standard bipolar transistor applications
Application Areas
Suitable for a wide range of electronic circuits and systems that require high voltage and current handling capabilities
Product Lifecycle
Currently available, no indication of near discontinuation
Replacement or upgrade options may be available from the manufacturer or other suppliers
Key Reasons to Choose This Product
High voltage and current capability
Low saturation voltage for efficient operation
High transition frequency for high-speed applications
Small, surface mount package for compact design
RoHS3 compliant for environmental sustainability
Widely compatible with standard bipolar transistor applications
FMMT5087R 3MZETEX/DIODES
FMMT495TAPBFDiodes Incorporated