Manufacturer Part Number
FMMT493ATA
Manufacturer
Diodes Incorporated
Introduction
NPN bipolar junction transistor (BJT)
Suitable for general-purpose amplifier and switching applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 500 mW
Collector-emitter breakdown voltage: 60 V
Collector current (max): 1 A
Collector cutoff current (max): 100 nA
Collector-emitter saturation voltage: 500 mV @ 100 mA, 1 A
DC current gain (hFE): 300 min @ 250 mA, 10 V
Transition frequency: 150 MHz
Surface mount package: SOT-23-3
Product Advantages
Robust and reliable performance
Suitable for a wide range of applications
Compact surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 60 V
Current Collector (Ic) (Max): 1 A
Current Collector Cutoff (Max): 100 nA
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 100 mA, 1 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 250 mA, 10 V
Frequency Transition: 150 MHz
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments and high-reliability applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplifier and switching applications
Suitable for use in various electronic devices and systems
Product Lifecycle
Current product, no indications of discontinuation
Replacements and upgrades may be available from the manufacturer or third-party suppliers
Key Reasons to Choose This Product
Robust and reliable performance
Suitable for a wide range of applications
Compact surface mount package
RoHS3 compliance for use in various applications
Readily available and compatible with a wide range of electronic circuits and systems