FMMT458QTA - Diodes Incorporated

Manufacturer Part Number

FMMT458QTA

Manufacturer

Diodes Incorporated

Introduction

High Voltage NPN Bipolar Junction Transistor

Product Features and Performance

Wide Collector-Emitter Breakdown Voltage: 400V

Low Collector Cutoff Current: 100nA (max)

High DC Current Gain: 100 (min) @ 50mA, 10V

High Transition Frequency: 50MHz

Low Collector-Emitter Saturation Voltage: 500mV (max) @ 6mA, 50mA

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

Suitable for high voltage and high power switching applications

Excellent current gain and high frequency performance

Small size and surface mount package for compact designs

Reliable and robust design for harsh environments

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 400V (max)

Collector Current: 225mA (max)

Power Dissipation: 500mW (max)

DC Current Gain: 100 (min) @ 50mA, 10V

Transition Frequency: 50MHz

Quality and Safety Features

RoHS3 compliant

Suitable for Tape and Reel packaging

Compatibility

Compatible with standard Surface Mount (SMT) assembly processes

Application Areas

High voltage switching and amplification circuits

Power supplies

Motor controls

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and availability is good.

Replacement or upgrade options are available from the manufacturer.

Key Reasons to Choose This Product

Excellent high voltage and high power handling capabilities

High current gain and high frequency performance

Compact surface mount package for space-constrained designs

Reliable and robust design for use in harsh environments

RoHS compliance for environmentally-friendly applications