FMMT455TA - Diodes Incorporated

Manufacturer Part Number

FMMT455TA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 Package

Operating Temperature: -55°C to 150°C

Power Rating: 500 mW

Collector-Emitter Breakdown Voltage: 140 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 700 mV @ 15 mA, 150 mA

DC Current Gain (hFE): Minimum 100 @ 150 mA, 10 V

Transition Frequency: 100 MHz

Surface Mount Mounting

Product Advantages

High voltage and current handling capability

High-frequency operation

Small package size for compact designs

Key Technical Parameters

Power Rating: 500 mW

Collector-Emitter Breakdown Voltage: 140 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 700 mV @ 15 mA, 150 mA

DC Current Gain (hFE): Minimum 100 @ 150 mA, 10 V

Transition Frequency: 100 MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

SOT-23-3 Package

Application Areas

General-purpose amplifier and switching applications

Power supplies

Motor control

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation information available

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

High voltage and current handling capability for demanding applications

High-frequency operation for high-speed circuits

Small package size for compact designs

RoHS3 compliance for use in environmentally-conscious applications

Broad range of applications in power electronics, industrial, and consumer electronics