Manufacturer Part Number
FCX593TA
Manufacturer
Diodes Incorporated
Introduction
FCX593TA is a PNP bipolar junction transistor (BJT) from Diodes Incorporated.
Product Features and Performance
Power rating of 1W
Collector-Emitter Breakdown Voltage (VCEO) of 100V
Collector Current (IC) of 1A
Collector Cutoff Current (ICBO) of 100nA
Low Collector-Emitter Saturation Voltage (VCE(sat)) of 300mV @ 25mA, 250mA
DC Current Gain (hFE) of 100 min. @ 500mA, 5V
Transition Frequency (fT) of 50MHz
Product Advantages
Suitable for high voltage and high current applications
Low saturation voltage for efficient operation
Good current gain and high-frequency performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 100V
Current Collector (Ic) (Max): 1A
Current Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 25mA, 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency Transition: 50MHz
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Package: SOT-89-3
Application Areas
Suitable for high voltage and high current applications such as power amplifiers, switches, and drivers.
Product Lifecycle
Active product, not nearing discontinuation.
Replacements and upgrades available as needed.
Key Reasons to Choose This Product
High voltage and current handling capability
Low saturation voltage for efficient operation
Good current gain and high-frequency performance
RoHS3 compliant and suitable for surface mount applications
Active product with available replacements and upgrades
