Manufacturer Part Number
FCX591ATA
Manufacturer
Diodes Incorporated
Introduction
High-performance PNP bipolar junction transistor (BJT)
Designed for general-purpose amplifier and switch applications
Product Features and Performance
Operating temperature range: -65°C to 150°C
Power rating: 1 W
Collector-emitter breakdown voltage: 40 V
Collector current: 1 A
Collector cutoff current: 100 nA
Collector-emitter saturation voltage: 500 mV @ 100 mA, 1 A
DC current gain: 300 @ 100 mA, 5 V
Transition frequency: 150 MHz
Product Advantages
Robust and reliable performance
High current handling capability
Suitable for a wide range of applications
Key Technical Parameters
Transistor type: PNP
Package: SOT-89-3 (TO-243AA)
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplifier and switch applications
Audio and power supply circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent performance characteristics
Robust and reliable design
Versatile application possibilities
RoHS compliance for environmental safety
Availability of replacement or upgrade options
