Manufacturer Part Number
FCX558TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
Operates in the temperature range of -65°C to 150°C (TJ)
Maximum Power Dissipation: 1 W
Maximum Collector-Emitter Breakdown Voltage: 400 V
Maximum Collector Current: 200 mA
Maximum Collector Cutoff Current: 100 nA
Typical Collector-Emitter Saturation Voltage: 500 mV @ 6 mA, 50 mA
Minimum DC Current Gain (hFE): 100 @ 50 mA, 10 V
Transition Frequency: 50 MHz
Product Advantages
Robust and reliable performance
Suitable for a wide range of applications
Compact surface mount package
Key Technical Parameters
Transistor Type: PNP
RoHS Compliance: RoHS3 Compliant
Package: SOT-89-3, Tape & Reel (TR)
Quality and Safety Features
Compliant with RoHS3 directive
Robust design for reliable operation
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Suitable for use in a wide range of electronic applications, such as amplifiers, switches, and power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements or upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Reliable and robust performance across a wide temperature range
High breakdown voltage and current handling capabilities
Compact surface mount package for efficient board layout
RoHS3 compliance for use in environmentally-conscious applications
Suitable for a diverse range of electronic circuit designs and systems