Manufacturer Part Number
FCX493TA
Manufacturer
Diodes Incorporated
Introduction
This is a high-performance NPN bipolar junction transistor (BJT) from Diodes Incorporated, suitable for a wide range of electronic applications.
Product Features and Performance
Operates in the -65°C to 150°C temperature range
Maximum power rating of 1 W
Breakdown voltage up to 100 V
Maximum collector current of 1 A
Collector cutoff current of up to 100 nA
Saturation voltage of 600 mV @ 100 mA, 1 A
Minimum DC current gain of 100 @ 250 mA, 10 V
Transition frequency of 150 MHz
Product Advantages
Excellent thermal and electrical performance
Compact surface mount package
Highly reliable and durable
Suitable for a wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 100 V
Collector Current (Max): 1 A
Collector Cutoff Current (Max): 100 nA
Saturation Voltage (Max): 600 mV
DC Current Gain (Min): 100
Transition Frequency: 150 MHz
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
This transistor is compatible with a wide range of electronic circuits and can be used as a replacement for similar NPN bipolar junction transistors.
Application Areas
Switching and amplifying circuits
Power supplies
Motor control
Audio and video equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and actively supported by the manufacturer. No discontinuation or replacement plans have been announced.
Key Reasons to Choose This Product
Excellent electrical and thermal performance, making it suitable for high-power and high-frequency applications.
Compact surface mount package for efficient space utilization in electronic designs.
Reliable and durable construction, ensuring long-term operation in various environmental conditions.
Wide compatibility and suitability for a diverse range of electronic applications.
Readily available and actively supported by the manufacturer, providing assurance of product longevity and support.
