DPLS350Y-13 - Diodes Incorporated

Manufacturer Part Number

DPLS350Y-13

Manufacturer

Diodes Incorporated

Introduction

The DPLS350Y-13 is a PNP bipolar junction transistor (BJT) from Diodes Incorporated, designed for a wide range of general-purpose applications.

Product Features and Performance

Power rating of 1 W

Collector-emitter breakdown voltage of 50 V

Collector current of up to 3 A

Low collector-emitter saturation voltage of 390 mV at 300 mA, 3 A

Transition frequency of 100 MHz

Operating temperature range of -55°C to 150°C

Product Advantages

Efficient power handling

High voltage and current capability

Low saturation voltage for improved efficiency

Wide operating temperature range

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V

Collector current: 3 A

Collector-emitter saturation voltage: 390 mV @ 300 mA, 3 A

DC current gain (hFE): 200 min @ 1 A, 2 V

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Packaged in the industry-standard SOT-89-3 surface-mount package

Compatibility

The DPLS350Y-13 is a general-purpose PNP transistor that can be used in a wide range of electronic circuits and applications.

Application Areas

Power supplies

Amplifiers

Switches

Drivers

General-purpose signal processing

Product Lifecycle

The DPLS350Y-13 is an active product, and there are no plans for discontinuation. Replacement or upgraded options may be available from Diodes Incorporated.

Key Reasons to Choose This Product

High power handling and voltage/current capabilities

Low saturation voltage for improved efficiency

Wide operating temperature range

RoHS compliance for environmental responsibility

Widely compatible and suitable for a variety of applications