DPBT8105-7 - Diodes Incorporated

Manufacturer Part Number

DPBT8105-7

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Packaging (SOT-23-3)

Operating Temperature Range: -55°C to 150°C

Power Rating: 600 mW

Collector-Emitter Breakdown Voltage (Max): 60 V

Collector Current (Max): 1 A

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage (Max): 600 mV @ 100 mA, 1 A

DC Current Gain (hFE) (Min): 100 @ 500 mA, 5 V

Transition Frequency: 150 MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

High power and voltage handling capabilities

High DC current gain

High transition frequency

Key Technical Parameters

Transistor Type: PNP

Package: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of electronic circuit designs and applications

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Audio circuits

General-purpose electronics

Product Lifecycle

Current product offering

Replacements and upgrades may be available

Key Reasons to Choose

Reliable and high-performance PNP bipolar transistor

Compact surface mount package for efficient board space utilization

Wide operating temperature range for diverse application environments

High power and voltage handling capabilities for demanding circuits

High DC current gain and transition frequency for improved circuit performance

RoHS3 compliance for environmentally-friendly design