DMTH4007SPD-13 - Diodes Incorporated

Manufacturer Part Number

DMTH4007SPD-13

Manufacturer

Diodes Incorporated

Introduction

Dual N-Channel MOSFET Array with low on-resistance in a compact PowerDI5060-8 package

Product Features and Performance

Low on-resistance of 8.6 mΩ at 17 A, 10 V

Continuous drain current of 14.2 A at 25°C

Input capacitance of 2026 pF at 30 V

Gate threshold voltage of 4 V at 250 μA

Gate charge of 41.9 nC at 10 V

Operates over a wide temperature range of -55°C to 175°C

Product Advantages

Compact PowerDI5060-8 package

Dual N-Channel MOSFET design for space-saving

Low on-resistance for efficient power conversion

High current handling capability

Key Technical Parameters

Drain to Source Voltage (Vdss): 40 V

RDS(on) (Max): 8.6 mΩ @ 17 A, 10 V

Continuous Drain Current (ID): 14.2 A at 25°C

Input Capacitance (Ciss): 2026 pF @ 30 V

Gate Threshold Voltage (Vgs(th)): 4 V @ 250 μA

Gate Charge (Qg): 41.9 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Operates over a wide temperature range of -55°C to 175°C

Compatibility

Surface mount design for easy integration

Application Areas

Power conversion circuits

Motor drivers

Switching power supplies

Automotive electronics

Product Lifecycle

This product is currently in production and not near discontinuation.

Replacement or upgrade options may be available from the manufacturer as technology evolves.

Key Reasons to Choose This Product

Compact and space-efficient dual MOSFET design

Excellent performance characteristics, including low on-resistance and high current capability

Wide operating temperature range suitable for demanding applications

RoHS3 compliance for use in environmentally-conscious designs

Surface mount package for easy integration into PCBs