Manufacturer Part Number
DMTH4007LPSQ-13
Manufacturer
Diodes Incorporated
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
40V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
5mOhm On-Resistance (Rds(on)) at 20A, 10V
5A Continuous Drain Current (Id) at 25°C Ambient
100A Continuous Drain Current (Id) at 25°C Case
1895pF Input Capacitance (Ciss) at 30V
1nC Gate Charge (Qg) at 10V
7W Power Dissipation at 25°C Ambient
150W Power Dissipation at 25°C Case
Product Advantages
Automotive-qualified (AEC-Q101)
Excellent on-resistance performance
High current handling capability
Compact PowerDI5060-8 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.5mOhm
Continuous Drain Current (Id): 15.5A (Ta), 100A (Tc)
Input Capacitance (Ciss): 1895pF
Gate Charge (Qg): 29.1nC
Quality and Safety Features
RoHS3 compliant
Automotive-grade quality (AEC-Q101)
Compatibility
Suitable for a variety of automotive and industrial applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switching power supplies
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent on-resistance performance for efficient power switching
High current handling capability for demanding applications
Compact package design for space-constrained designs
Automotive-grade quality and reliability
Wide operating temperature range of -55°C to 175°C