Manufacturer Part Number
DMT3009LDT-7
Manufacturer
Diodes Incorporated
Introduction
Dual asymmetrical N-channel MOSFET
Product Features and Performance
30V drain-to-source voltage
1mΩ on-resistance at 14.4A, 10V
30A continuous drain current at 25°C
1500pF input capacitance at 15V
3V gate-to-source threshold voltage at 250μA
20nC gate charge at 15V
Product Advantages
High-power density
Low on-resistance
Suitable for high-current applications
Key Technical Parameters
30V drain-to-source voltage
1mΩ on-resistance
30A continuous drain current
1500pF input capacitance
3V gate-to-source threshold voltage
20nC gate charge
Quality and Safety Features
RoHS3 compliant
V-DFN3030-8 (Type K) package
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount
Application Areas
Power management
Motor control
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently available, no indication of discontinuation or replacement.
Key Reasons to Choose This Product
High power density
Low on-resistance for efficient power delivery
Suitable for high-current applications
Wide operating temperature range
Surface mount package for easy integration