DMT3006LFV-7 - Diodes Incorporated

Manufacturer Part Number

DMT3006LFV-7

Manufacturer

Diodes Incorporated

Introduction

N-Channel MOSFET transistor with high power handling capabilities and low on-resistance.

Product Features and Performance

30V drain-to-source voltage rating

60A continuous drain current at 25°C

7mΩ maximum on-resistance at 9A, 10V

1155pF maximum input capacitance at 15V

2W maximum power dissipation at 25°C

-55°C to 150°C operating temperature range

Product Advantages

Efficient power handling

Low on-resistance for low conduction losses

Wide operating temperature range

Small PowerDI3333-8 package for compact designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 7mΩ @ 9A, 10V

Drain Current (Id): 60A @ 25°C

Input Capacitance (Ciss): 1155pF @ 15V

Power Dissipation (Pd): 2W @ 25°C

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Suitable for a wide range of power electronic applications requiring high current, high voltage N-channel MOSFET transistors.

Application Areas

Power supplies

Motor drives

Industrial controls

Automotive electronics

Product Lifecycle

This product is an active and currently available part. No discontinuation or end-of-life plans are known at this time.

Key Reasons to Choose This Product

High power handling capability up to 60A

Extremely low on-resistance for efficient power conversion

Wide operating temperature range from -55°C to 150°C

Small PowerDI3333-8 package for compact designs

RoHS3 compliance for environmentally-friendly use