DMP6110SSD-13 - Diodes Incorporated

Manufacturer Part Number

DMP6110SSD-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

2 P-Channel (Dual) configuration

60V Drain to Source Voltage (Vdss)

105mOhm Rds On (Max) @ Id, Vgs

3A Continuous Drain (Id) @ 25°C

969pF Input Capacitance (Ciss) (Max) @ Vds

3V Vgs(th) (Max) @ Id

2nC Gate Charge (Qg) (Max) @ Vgs

-55°C ~ 150°C (TJ) Operating Temperature

2W Power Max

Product Advantages

Compact 8-SOIC (0.154", 3.90mm Width) surface mount package

Dual P-Channel MOSFET design for efficient and space-saving applications

Wide operating temperature range from -55°C to 150°C

Low on-resistance and power dissipation for improved efficiency

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V

Continuous Drain (Id) @ 25°C: 3.3A

Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V

Vgs(th) (Max) @ Id: 3V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Tape & Reel (TR) packaging

Compatibility

Compatible with a wide range of electronic devices and circuits requiring dual P-Channel MOSFET devices.

Application Areas

Power management circuits

Motor control applications

Battery charging and discharging circuits

General-purpose switching and control applications

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

Compact and space-saving 8-SOIC package

Efficient dual P-Channel MOSFET design

Wide operating temperature range

Low on-resistance and power dissipation

RoHS3 compliance for environmental responsibility

Compatibility with a wide range of electronic applications