DMP6180SK3-13 - Diodes Incorporated

Manufacturer Part Number

DMP6180SK3-13

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

60V Drain-Source Voltage

±20V Gate-Source Voltage

110mΩ On-Resistance @ 12A, 10V

14A Continuous Drain Current @ 25°C

7pF Input Capacitance @ 30V

7W Power Dissipation @ 25°C

-55°C to 150°C Operating Temperature

Product Advantages

Compact TO-252-3 (D-Pak) surface mount package

Low on-resistance for improved efficiency

Suitable for power switching and amplification applications

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs Max): ±20V

On-Resistance (Rds(on) Max): 110mΩ @ 12A, 10V

Drain Current (Id Continuous): 14A @ 25°C

Input Capacitance (Ciss Max): 984.7pF @ 30V

Power Dissipation (Max): 1.7W @ 25°C

Threshold Voltage (Vgs(th) Max): 2.7V @ 250μA

Gate Charge (Qg Max): 17.1nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Suitable for reflow soldering

Compatibility

Suitable for a wide range of power switching and amplification applications

Application Areas

Power supplies

Motor drives

Switching regulators

Audio amplifiers

General purpose power switching

Product Lifecycle

This product is an active and current offering from Diodes Incorporated.

Replacement or upgrade options may be available, depending on application requirements.

Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

Low on-resistance for improved efficiency and performance

Wide operating temperature range of -55°C to 150°C

Suitable for a variety of power switching and amplification applications

RoHS3 compliance for use in environmentally conscious designs