DMP21D0UT-7 - Diodes Incorporated

Manufacturer Part Number

DMP21D0UT-7

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V

Current Continuous Drain (Id) @ 25°C: 590mA (Ta)

Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V

Power Dissipation (Max): 240mW (Ta)

Vgs(th) (Max) @ Id: 700mV @ 250A (Typ)

Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 1.54 nC @ 8 V

Product Advantages

Low on-resistance

High current capability

Compact surface-mount package

Key Technical Parameters

MOSFET (Metal Oxide) Technology

P-Channel FET Type

SOT-523 Package

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of power management and control applications

Product Lifecycle

Currently in production

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high current capability

Compact and efficient surface-mount package

Compliance with RoHS3 safety standards

Versatile application potential in power management and control systems