Manufacturer Part Number
DMP2165UW-7
Manufacturer
Diodes Incorporated
Introduction
P-channel enhancement-mode MOSFET transistor
Product Features and Performance
Low on-resistance of 90 mΩ at 1.5 A, 4.5 V
Continuous drain current of 2.5 A at 25°C
Operating temperature range of -55°C to 150°C
Input capacitance of 335 pF at 15 V
Power dissipation of 500 mW
Product Advantages
Low on-resistance for efficient power conversion
High continuous drain current for high-power applications
Wide operating temperature range for versatile use
Low input capacitance for fast switching
High power dissipation for reliable operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs) Max: ±12 V
Vgs(th) Max @ Id: 1 V @ 250 μA
Drive Voltage (Max Rds On, Min Rds On): 1.8 V, 4.5 V
Gate Charge (Qg) Max @ Vgs: 3.5 nC @ 4.5 V
Quality and Safety Features
RoHS3 compliant
Packaged in SOT-323 surface mount package
Compatibility
Compatible with a variety of electronic circuits and applications
Application Areas
Power management
Switching circuits
Motor drives
Battery chargers
Electronic appliances
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available as needed
Key Reasons to Choose This Product
Excellent low on-resistance performance for efficient power conversion
High continuous drain current for high-power applications
Wide operating temperature range for diverse applications
Low input capacitance for fast switching
High power dissipation for reliable operation
RoHS3 compliance for environmentally friendly use
Compatibility with a wide range of electronic circuits and applications